| PART |
Description |
Maker |
| CY7C1523V18-200BZCES CY7C1523V18-250BZCES CY7C1523 |
72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
Cypress
|
| CY7C1394JV18-300BZC CY7C1394JV18-300BZI CY7C1394JV |
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
| CY7C1424BV18 CY7C1424BV18-167BZC CY7C1424BV18-167B |
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
| CY7C1394AV18 CY7C1392AV18 CY7C1393AV18 CY7C1394AV1 |
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
CYPRESS[Cypress Semiconductor]
|
| K7J323682M K7J321882M |
1Mx36 & 2Mx18 DDR II SIO b2 SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| CY7C1319BV18-167BZC CY7C1319BV18-278BZC CY7C1321BV |
2M X 8 DDR SRAM, 0.45 ns, PBGA165
512K X 36 DDR SRAM, 0.45 ns, PBGA165
18-Mbit DDR-II SRAM 4-Word Burst Architecture
|
CYPRESS SEMICONDUCTOR CORP
|
| R1Q4A4436RBG-33IB0 |
144-Mbit DDR II SRAM 2-word Burst
|
Renesas Electronics Corporation
|
| CY7C1418BV18-278BZC CY7C1418BV18-278BZI CY7C1418BV |
36-Mbit DDR-II SRAM 2-Word Burst Architecture 4M X 8 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1250V18-300BZI CY7C1246V18-333BZI CY7C1246V18- |
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) 36兆位的DDR - II SRAM2字突发架构（2.0周期读写延迟
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) 1M X 36 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
